Magnetic two-dimensional field effect transistor
| Autor: | W. Zawadzki, Christophe Chaubet, Boris Chenaud, I. Bisotto, Andre Raymond, Jean-Christophe Harmand, Adrien Delgard |
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| Přispěvatelé: | Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Electron density
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Electron localization function Magnetic field [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph] Electric field 0103 physical sciences Field-effect transistor 010306 general physics 0210 nano-technology Quantum well [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] Voltage |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2017, 111 (23), pp.233508. ⟨10.1063/1.4994634⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4994634⟩ |
| Popis: | We study experimentally low-temperature current-voltage characteristics of n-type GaAs/GaAlAs modulation doped quantum wells under the influence of an external magnetic field. In particular, we use samples additionally doped in the well with Be acceptors. As showed previously, negatively charged acceptor ions can localize conduction electrons by a joint effect of a quantum well and an external magnetic field. It is found that, in the acceptor-doped samples, the Hall electric field resulting from the presence of magnetic field plays the role of the gate voltage. At sufficiently high magnetic fields, the drain current has a constant value independent of the drain voltage. It is argued that the above phenomenon is due to the electron localization with the resulting decrease of conducting electron density in the crossed-field configuration. We propose to exploit the observed unusual behaviour as a device called “magnetic two-dimensional electron gas field effect transistor” operating at low temperatures. |
| Databáze: | OpenAIRE |
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