High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
| Autor: | Kuniyuki Kakushima, Takuro Sakamoto, Kentaro Matsuura, Iriya Muneta, Masaya Hamada, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Annealing (metallurgy) Transition metal dichalcogenide (TMDC) chemistry.chemical_element 02 engineering and technology 01 natural sciences Charge-carrier density Hall effect Sputtering 0103 physical sciences Electrical and Electronic Engineering zirconium disulfide (ZrS₂) 010302 applied physics business.industry radio-frequency magnetron sputtering Sputter deposition 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials sulfur vapor annealing TK1-9971 Semiconductor chemistry Molybdenum Optoelectronics Crystallite Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019) |
| ISSN: | 2168-6734 |
| Popis: | A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film on a SiO2/Si substrate was successfully achieved by a high-temperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved to 1,250 cm2V−1s−1 and $8.5 \times 10^{17}$ cm−3, simultaneously. High-mobility two-dimensional ZrS2 film is a strong candidate for advanced MISFETs. |
| Databáze: | OpenAIRE |
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