Comparison of lithium niobate and silicon substrate on phase shift and efficiency performance for mach-zehnder interferometer modulator
| Autor: | Aziati Husna Awang, Nor Hidayah Roslan, Ahmad Rifqi Md Zain, Mohd Hanapiah M. Yusoff |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Control and Optimization
Materials science Silicon Computer Networks and Communications Lithium niobate chemistry.chemical_element 02 engineering and technology Substrate (electronics) Slow light Mach–Zehnder interferometer Slow-light Optical modulator 03 medical and health sciences chemistry.chemical_compound Group velocity Electrical and Electronic Engineering 030304 developmental biology 0303 health sciences business.industry Doping Mach-zehnder interferometer 021001 nanoscience & nanotechnology chemistry Hardware and Architecture Splitter Signal Processing Optoelectronics 0210 nano-technology business Information Systems |
| Popis: | In this study, the low-group velocity slow-light mach-zehnder interferometer (MZI) modulator, low loss and high efficiency for two modulator substrate lithium niobate (LN) and silicon were presented and optimized at 1.55µm operating wavelength. The high power consumption of conventional modulator was the major drawback in the operation of modulators. Therefore, it was a good time for low-power modulator design and development and to compare the LN and Silicon modulator on the phase shifted using the slow-light technique by designing the full MZI modulator consisting of splitter and combiner on both substrates. The phase shift of LN is 2% compared with the silicon 0.09% and higher phase shift give better performance with low power consumption due to the change of modulating voltage of the MZI modulator for LN while the silicon depends on modulating voltage manipulating concentration of charge carrier in doped silicon. |
| Databáze: | OpenAIRE |
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