Double-barrier Josephson junctions: theory and experiment
| Autor: | Alexandre Avraamovitch Golubov, D. Cassel, M. Yu. Kupriyanov, Alexander Brinkman, Michael Siegel, Horst Rogalla |
|---|---|
| Přispěvatelé: | Faculty of Science and Technology |
| Rok vydání: | 2001 |
| Předmět: |
Josephson effect
Materials science Condensed matter physics IR-55661 Stationary case Niobium chemistry.chemical_element Condensed Matter Physics Double barrier Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Josephson structures Electronic Optical and Magnetic Materials Hysteresis non-stationary properties double-barrier chemistry Condensed Matter::Superconductivity ddc:530 Critical current Electrical and Electronic Engineering Thin film Voltage |
| Zdroj: | IEEE transactions on applied superconductivity 11, 1146 (2001). doi:10.1109/77.919551 IEEE transactions on applied superconductivity, 11(1, Par), 1146-1149. IEEE |
| ISSN: | 1051-8223 |
| Popis: | New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (I is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/Al/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface barriers in order to realize non-hysteretic SIS'IS junctions with high critical current density and I/sub c/R/sub N/ products. A comparison with single-barrier SIS junctions with high critical current density is carried out. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|