OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution
| Autor: | A. Stockman, E. Canato, Peter Moens, Gaudenzio Meneghesso, Enrico Zanoni, C. De Santi, Matteo Meneghini, F. Masin |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Positive charge redistribution OFF-state trapping FOS: Physical sciences 02 engineering and technology Trapping Gate trapping Applied Physics (physics.app-ph) 01 natural sciences Instability Normally-off law.invention Stress (mechanics) law Ionization 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Threshold voltage instability Electrical and Electronic Engineering Acceptor ionization Buffer trapping Carbon doping Drain bias stress Dynamic R ON p-GaN HEMTs Safety Risk Reliability and Quality 010302 applied physics business.industry 020208 electrical & electronic engineering Transistor Charge (physics) Physics - Applied Physics Condensed Matter Physics Acceptor Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optoelectronics business Voltage |
| Zdroj: | Microelectronics Reliability |
| Popis: | We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii) At moderate voltages, VTH instability is related to trapping at the gate stack, due to residual negative charge left behind by the holes that leave the p-GaN layer through the Schottky gate contact and/or to trapping at the barrier. At higher voltages, we demonstrate the interplay of two trapping processes by C-V and pulsed drain current analysis: (iii) a fast storage of positive charge, accumulated near the buffer/SRL interface, not strongly thermally activated, dominating at higher voltages; (iv) a slower negative charge storage, thermally activated with activation energies for trapping and de-trapping equal to ~0.6 eV and ~0.4-0.8 eV, respectively. ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][European Union's Horizon 2020 research and innovation program][InRel-NPower][grant agreement No. 720527] |
| Databáze: | OpenAIRE |
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