Visualisation of edge effects in side-gated graphene nanodevices
| Autor: | Alessandra Manzin, Arseniy Lartsev, Alexander Tzalenchuk, Olga Kazakova, Vishal Panchal, Rositza Yakimova |
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| Rok vydání: | 2014 |
| Předmět: |
Conduction electron
Multidisciplinary Materials science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Graphene FOS: Physical sciences Kemi Physics - Applied Physics Applied Physics (physics.app-ph) Electron doped Edge (geometry) Thermal conduction Article law.invention Narrow band law Electric field Chemical Sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Optoelectronics business Atmospheric contamination |
| Zdroj: | Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of ~60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene. Comment: 4 Figures, 1 Table |
| Databáze: | OpenAIRE |
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