Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
| Autor: | Hui Li, Li Sian Jheng, Liang Chen Li, Chiao Chang, Hung Hsiang Cheng |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Semiconductor thin films Materials science Band gap Annealing (metallurgy) Schottky barrier Analytical chemistry General Physics and Astronomy chemistry.chemical_element Nanotechnology Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Nickel chemistry Electrical resistivity and conductivity 0103 physical sciences 0210 nano-technology lcsh:Physics |
| Zdroj: | AIP Advances, Vol 7, Iss 9, Pp 095324-095324-5 (2017) |
| ISSN: | 2158-3226 |
| DOI: | 10.1063/1.4997348 |
| Popis: | We report an investigation of the Schottky barrier height (SBH) of Ni/n-type Ge and Ni/n-type GeSn films that is annealed at a wide range of temperatures. Both voltage- and temperature-dependent current–voltage (I–V) measurements are performed. From the analysis of these nonlinear I–V traces, the SBH is found and the results shows that the SBH of Ni/n-type GeSn (a) is smaller than that of Ni/n-type Ge and (b) decreases with the Sn content of the surface GeSn layer associated with the thermal annealing. By modeling the composition- and strain-dependent energy bandgap (Eg), the relationship between the SBH and Eg is established and it is found that SBH/Eg ∼0.8. These results suggest that the GeSn film could serve as an interfacial layer for the reduction of the SBH in Ge-based electronic devices that are desirable for applications. |
| Databáze: | OpenAIRE |
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