Resistive Switching Properties of Highly Transparent SnO2:Fe
| Autor: | U. S. Joshi, S. J. Trivedi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Resistance switching
Radiation Materials science Vis spectroscopy business.industry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide RRAM 01 natural sciences UV 0104 chemical sciences Resistive random-access memory Resistive switching Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Journal of Nano- and Electronic Physics. 9:01025-1 |
| ISSN: | 2306-4277 2077-6772 |
| DOI: | 10.21272/jnep.9(1).01025 |
| Popis: | Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple, low temperature solution process growth of SnO2:Fe thin film nanostructures was employed. Grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM), respectively, confirmed a phase pure cubic growth with mono-disperse nanocrystallites of ~ 20 nm. Sharp interface with substrate and top metal electrodes were achieved. Reproducible hysteresis in the I-V curves with symmetrical resistance switching ratio of more than 4 • 103 at a low operating voltage of ± 1.1 V has been demonstrated. Large values of memory retention of about 5 moths; confirmed the nonvolatile behaviour of the device cell consisting of Ag/SnO2:Fe/Ag planar structure. A mechanism involving the space charge limited current combined with Schottky conduction at the metal/oxide interface is proposed. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/SnO2 interface. |
| Databáze: | OpenAIRE |
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