Molecular Dynamics Simulation on B3-GaN Thin Films under Nanoindentation
| Autor: | Henggao Xiang, Haitao Li, Chen Chen, Xianghe Peng |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
General Chemical Engineering dislocation density 02 engineering and technology anisotropy Plasticity 01 natural sciences prismatic loops Article lcsh:Chemistry Molecular dynamics Indentation 0103 physical sciences General Materials Science B3-GaN Composite material Anisotropy 010302 applied physics Nanoindentation 021001 nanoscience & nanotechnology molecular dynamics Loop (topology) Shear (sheet metal) lcsh:QD1-999 Dislocation 0210 nano-technology |
| Zdroj: | Nanomaterials, Vol 8, Iss 10, p 856 (2018) Nanomaterials Volume 8 Issue 10 |
| ISSN: | 2079-4991 |
| Popis: | The B3-GaN thin film was investigated by performing large-scale molecular dynamics (MD) simulation of nanoindentation. Its plastic behavior and the corresponding mechanism were studied. Based on the analysis on indentation curve, dislocation density, and orientation dependence, it was found that the indentation depths of inceptive plasticity on (001), (110), and (111) planes were consistent with the Schmid law. The microstructure evolutions during the nanoindentation under different conditions were focused, and two formation mechanisms of prismatic loop were proposed. The &ldquo lasso&rdquo like mechanism was similar to that in the previous research, where a shear loop can translate into a prismatic loop by cross-slip and the extended &ldquo like mechanism was not found to be reported. Our simulation showed that the two screw components of a shear loop will glide on another loop until they encounter each other and eventually produce a prismatic dislocation loop. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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