Low Temperature Crystallization Of Amorphous Silicon By Gold Nanoparticle
| Autor: | M. Aydın, K. Erturk, Rasit Turan, Mehmet Goksin Karaman, Salar Habibpur Sedani |
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| Rok vydání: | 2013 |
| Předmět: |
Soda-lime glass
Amorphous silicon Materials science Silicon Metallurgy Nanoparticle chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Amorphous solid chemistry.chemical_compound chemistry Chemical engineering law Electrical and Electronic Engineering Crystallization Thin film Metal-induced crystallization |
| Popis: | Gold nanoparticle production.Deposition of amorphous silicon by e-beam evaporation method.Annealing of amorphous silicon for crystallization by gold nanoparticles. Single crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, the use of ordinary soda lime glass requires process temperatures higher than 600?C. Crystallization of Si film at around this temperature takes place in extremely long time exceeding 20h in most cases. In order to reduce this long process time, new crystallization techniques such as Metal Induced Crystallization (MIC) using thin metal films as a catalyst layer is attracting much attention. Instead of using continuous metal films, the use of metal nanoparticles offers some advantages. In this work, gold thin films were deposited on aluminum doped zinc oxide (AZO) coated glass and then annealed for nanoparticle formation. Amorphous silicon was then deposited by e-beam evaporation onto metal nanoparticles. Silicon films were annealed for crystallization at different temperatures between 500?C and 600?C. We showed that the crystallization occurs at lower temperatures and with higher rates with the inclusion of gold nanoparticles (AuNP). Raman and XRD results indicate that the crystallization starts at temperatures as low as 500?C and an annealing at 600?C for a short process time provides sufficiently good crystallinity. |
| Databáze: | OpenAIRE |
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