A High-Voltage Characterisation Platform For Emerging Resistive Switching Technologies
| Autor: | Jiawei Shen, Andrea Mifsud, Lijie Xie, Abdulaziz Alshaya, Christos Papavassiliou |
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| Rok vydání: | 2022 |
| Předmět: |
FOS: Computer and information sciences
Hardware_MEMORYSTRUCTURES Emerging Technologies (cs.ET) FOS: Electrical engineering electronic engineering information engineering Computer Science - Emerging Technologies Systems and Control (eess.SY) Electrical Engineering and Systems Science - Systems and Control |
| Zdroj: | 2022 IEEE International Symposium on Circuits and Systems (ISCAS) |
| DOI: | 10.48550/arxiv.2205.08391 |
| Popis: | Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of $\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies. Comment: 5 pages. To be published in ISCAS 2022 and made available on IEEEXplore |
| Databáze: | OpenAIRE |
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