Silicon as a ubiquitous contaminant in graphene derivatives with significant impact on device performance
| Autor: | Enrico Della Gaspera, Ashley Walker, Seyed Hamed Aboutalebi, Suresh K. Bhargava, Hossein Alimadadi, David L. Officer, Dorna Esrafilzadeh, Douglas R. MacFarlane, Rouhollah Jalili, Caiyun Wang, Yunfeng Chao, David R. G. Mitchell, Gordon G. Wallace, Thomas R. Gengenbach, Ahmad Esmaielzadeh Kandjani, Ylias M. Sabri |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Science Oxide General Physics and Astronomy chemistry.chemical_element Nanotechnology 02 engineering and technology 010402 general chemistry 01 natural sciences Capacitance Article General Biochemistry Genetics and Molecular Biology law.invention chemistry.chemical_compound law Impurity Graphite lcsh:Science Supercapacitor Multidisciplinary Graphene General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Microelectrode chemistry lcsh:Q 0210 nano-technology |
| Zdroj: | Nature Communications, Vol 9, Iss 1, Pp 1-13 (2018) Jalili, R, Esrafilzadeh, D, Aboutalebi, S H, Sabri, Y M, Kandjani, A E, Bhargava, S K, Della Gaspera, E, Gengenbach, T R, Walker, A, Chao, Y, Wang, C, Alimadadi, H, Mitchell, D R G, Officer, D L, MacFarlane, D R & Wallace, G G 2018, ' Silicon as a ubiquitous contaminant in graphene derivatives with significant impact on device performance ', Nature Communications, vol. 9, no. 1, 5070 . https://doi.org/10.1038/s41467-018-07396-3 Nature Communications |
| ISSN: | 2041-1723 |
| Popis: | Silicon-based impurities are ubiquitous in natural graphite. However, their role as a contaminant in exfoliated graphene and their influence on devices have been overlooked. Herein atomic resolution microscopy is used to highlight the existence of silicon-based contamination on various solution-processed graphene. We found these impurities are extremely persistent and thus utilising high purity graphite as a precursor is the only route to produce silicon-free graphene. These impurities are found to hamper the effective utilisation of graphene in whereby surface area is of paramount importance. When non-contaminated graphene is used to fabricate supercapacitor microelectrodes, a capacitance value closest to the predicted theoretical capacitance for graphene is obtained. We also demonstrate a versatile humidity sensor made from pure graphene oxide which achieves the highest sensitivity and the lowest limit of detection ever reported. Our findings constitute a vital milestone to achieve commercially viable and high performance graphene-based devices. Silicon-based contaminants are ubiquitous in natural graphite, and they are thus expected to be present in exfoliated graphene. Here, the authors show that such impurities play a non-negligible role in graphene-based devices, and use high-purity parent graphite to boost the performance of graphene sensors and supercapacitor microelectrodes. |
| Databáze: | OpenAIRE |
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