Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
| Autor: | Chiu C. Tang, Melvin Vopson, I. Unzueta, Victor Kuncser, Esmaeil Namvar, Fernando Plazaola, Xiaoli Tan, Stephen Thompson, Michal Belusky |
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| Rok vydání: | 2019 |
| Předmět: |
Phase transition
Materials science anti-polar materials Mossbauer spectroscopy General Physics and Astronomy 02 engineering and technology polarization relaxation Physics and Astronomy(all) 01 natural sciences law.invention Tetragonal crystal system Materials Science(all) law Electric field Lattice (order) 0103 physical sciences General Materials Science EP/R028656/1 010302 applied physics time resolved synchrotron measurements solid state memories Condensed matter physics Physics RCUK Biasing 021001 nanoscience & nanotechnology Ferroelectricity Synchrotron EPSRC 0210 nano-technology Powder diffraction |
| Zdroj: | Vopson, M, Tan, X, Namvar, E, Belusky, M, Thompson, S, Kuncser, V, Plazaola, F, Unzueta, I & Tang, C 2019, ' Sub-lattice polarization states in anti-ferroelectrics and their relaxation process ', Current Applied Physics, vol. 19, no. 5, pp. 651-656 . https://doi.org/10.1016/j.cap.2019.03.009 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2019.03.009 |
| Popis: | We report studies of quasi-remanent polarization states in Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique in-situ electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn Mossbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0 V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of ±2 kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated “read-out” protocols, possibly involving dc electrical biasing. |
| Databáze: | OpenAIRE |
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