Ethoxy and silsesquioxane derivatives of antimony as dopant precursors: unravelling the structure and thermal stability of surface species on SiO2
| Autor: | Thibault Alphazan, Pierre Florian, Chloé Thieuleux |
|---|---|
| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie, Catalyse, Polymères et Procédés, R 5265 (C2P2), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Conditions Extrêmes et Matériaux : Haute Température et Irradiation (CEMHTI), Université d'Orléans (UO)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université d'Orléans (UO) |
| Rok vydání: | 2017 |
| Předmět: |
Dopant
Doping General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Grafting 01 natural sciences Silsesquioxane 0104 chemical sciences chemistry.chemical_compound Antimony chemistry Monolayer Alkoxy group [CHIM]Chemical Sciences Physical chemistry Organic chemistry Thermal stability Physical and Theoretical Chemistry 0210 nano-technology |
| Zdroj: | Physical Chemistry Chemical Physics Physical Chemistry Chemical Physics, 2017, 19 (12), pp.8595--8601. ⟨10.1039/c6cp08583k⟩ Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2017, 19 (12), pp.8595--8601. ⟨10.1039/c6cp08583k⟩ |
| ISSN: | 1463-9084 1463-9076 |
| DOI: | 10.1039/c6cp08583k |
| Popis: | International audience; We report here the controlled preparation of SiO2 supported Sb-(mono)layers and their thorough characterization by in situ IR, solid-state NMR and elemental analyses. This study allows for the molecular understanding of the surface Sb species derived from the grafting of ethoxy and polyhedral oligomeric silsesquioxane antimony derivatives as mono- or bi-podal Sb(III) surface species depending on the number of surface SiOH groups. This result is different from what was observed with the phosphorus analogue (POSS-P) that yielded P(V) species. A monolayer coverage of Sb species onto silica was also obtained using both POSS-Sb and the [Sb(OEt)3]2 derivative with surface densities ranging from ∼0.3 Sb nm−2 to 1.8 Sb nm−2, respectively. It is noteworthy that under optimized conditions, a layer of antimony species or suboxides on silica was produced using POSS-Sb without significant Sb loss, highlighting the protective properties of the POSS cage. These results open new perspectives for the controlled and non-destructive Sb-doping (Molecular Layer Doping) of semiconductors dedicated to nano-device applications. |
| Databáze: | OpenAIRE |
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