Effects of silicon porosity on physical properties of ZnO films
Autor: | M.-A. Zaïbi, A. Moadhen, A. Chaillou, M. Guendouz, Meherzi Oueslati, Hervé Rinnert, Yann Battie, A. En Naciri, M.-B. Bouzourâa |
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Přispěvatelé: | Université de Tunis El Manar (UTM), Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes (LCP-A2MC), Université de Lorraine (UL), Laboratoire de Spectroscopie Raman, Faculté des Sciences Mathématiques, Physiques et Naturelles de Tunis (FST), Université de Tunis El Manar (UTM)-Université de Tunis El Manar (UTM), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Université de Tunis |
Jazyk: | angličtina |
Rok vydání: | 2016 |
Předmět: |
Materials science
Silicon Scanning electron microscope Analytical chemistry chemistry.chemical_element 02 engineering and technology Porous silicon 01 natural sciences Crystallinity Optics Ellipsometry 0103 physical sciences General Materials Science Crystalline silicon Thin film Photoluminescence 010302 applied physics Spin coating Optical properties business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry ZnO [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology business |
Zdroj: | Materials Chemistry and Physics Materials Chemistry and Physics, 2016, 175, pp.233-240. ⟨10.1016/j.matchemphys.2016.03.026⟩ Materials Chemistry and Physics, Elsevier, 2016, 175, pp.233-240. ⟨10.1016/j.matchemphys.2016.03.026⟩ |
ISSN: | 0254-0584 |
Popis: | International audience; We report on structural and optical properties of ZnO thin films deposited on different Si-based substrates presenting different porosities. ZnO layers were prepared by sol gel method and deposited on crystalline silicon (ZnO/Si), mesoporous silicon (ZnO/PS+) and nanoporous silicon (ZnO/PS-) by spin coating. Several techniques such as scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence spectroscopy (PL) and spectroscopic ellipsometry (SE) were used to study the influence of the pore size of porous silicon (PS) on physical properties of ZnO films. SEM images revealed the formation of ZnO granular nanoparticles on Si, PS- and PS+ substrates. We show by the XRD analysis that hexagonal crystallized (002) ZnO is mainly obtained for ZnO/PS- system causing by a strong absorption of the capillary effect and high adhesion to PS- surface. An intense PL related to ZnO and PS- was demonstrated for ZnO/PS- in UV and visible ranges. Optical properties of ZnO were determined and analyzed by SE using Tanguy dispersion model. For each sample, a specific optical model was carried out. SE confirms a good physical properties of ZnO/PS- comparing to ZnO/Si and ZnO/PS+. For example, the good crystallinity is characterized by low damping factor value (Gamma). This value was found by SE to be low (29 meV) for the ZnO/PS-, while the damping factors of ZnO/Si and ZnO/PS+ are 47 meV and 70 meV, respectively. The amplitude of dielectric function of ZnO/PS- around 3.4 eV reveals an increase of grain size and crystallinity of ZnO layer. |
Databáze: | OpenAIRE |
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