A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver
| Autor: | Zeng Longyue, Huang Jiwei, Li Zhengping, Fang Min, Zhang Weifeng, Wang Riyan |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Transimpedance amplifier
Engineering RF front end business.industry Transconductance Electrical engineering Noise figure Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Direct-conversion receiver CMOS law Operational transconductance amplifier Electronic engineering Materials Chemistry Operational amplifier Electrical and Electronic Engineering business Direct-coupled amplifier |
| Zdroj: | Journal of Semiconductors. 33:035005 |
| ISSN: | 1674-4926 |
| DOI: | 10.1088/1674-4926/33/3/035005 |
| Popis: | A CMOS RF front-end for the Long-Term Evolution (LTE) direct conversion receiver is presented in this paper. With low noise transconductance amplifier (TCA), current commutating passive mixer and transimpedance operational amplifier (TIA), the RF front-end structure enables high-integration, high linearity and simple frequency planning for LTE multi-band applications. Large variable gain is achieved using current-steering transconductance stages. A current commutating passive mixer with 25% duty-cycle LO improves gain, noise and linearity. Direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer. Fabricated in a 0.13-μm CMOS process, the RF front-end achieves 45dB conversion voltage gain, 2.7dB N F, −7dBm IIP3, and +60dBm IIP2 with calibration from 2.3GHz to 2.7GHz. The total RF front end with divider draws 40mA from a single 1.2-V supply. |
| Databáze: | OpenAIRE |
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