Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition
| Autor: | Stefan Zollner, Gordon Grzybowski, Morgan E. Ware, Bruce Claflin, Arnold M. Kiefer |
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| Rok vydání: | 2020 |
| Předmět: |
Diffraction
Materials science Materials Science (miscellaneous) Alloy Analytical chemistry Stacking chemistry.chemical_element 02 engineering and technology Chemical vapor deposition engineering.material 010402 general chemistry Epitaxy GeSn and GeSiSn alloys lcsh:Technology 01 natural sciences Ellipsometry Remote plasma characterization crystalline growth process RPECVD lcsh:T 021001 nanoscience & nanotechnology 0104 chemical sciences chemistry engineering 0210 nano-technology Tin |
| Zdroj: | Frontiers in Materials, Vol 7 (2020) |
| ISSN: | 2296-8016 |
| DOI: | 10.3389/fmats.2020.00044 |
| Popis: | A remote plasma enhanced chemical vapor deposition (CVD) process using GeH4, SiH4, and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (100) substrates, without the need for buffer layers. X-ray diffraction measurements of a representative Ge1–xSnx sample which is 233 nm thick, with x = 9.6% show it to be highly oriented along the [001] direction and nearly relaxed, with 0.37% compressive strain. Ellipsometry measurements provide a pseudo-dielectric function which is well fitted by a 3-layer (substrate/alloy/surface oxide) model. Cross-sectional transmission-electron-microscope images show a highly defective interface layer, ∼ 60 nm thick, containing edge dislocations and stacking faults; above this layer, the lattice is well-ordered, with a much lower density of defects. Atomic force microscopy measurements show an RMS roughness of 1.2 nm for this film. |
| Databáze: | OpenAIRE |
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