Observation of a uniform temperature dependence in the electrical resistance across the structural phase transition in thin film vanadium oxide ($VO_{2}$)
| Autor: | S. Ramanathan, R. G. Mani |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Structural phase
Range (particle radiation) Condensed Matter - Materials Science Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Temperature cycling Vanadium oxide Hysteresis Electrical resistance and conductance Electrical resistivity and conductivity Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Thin film |
| Popis: | An electrical study of thin $VO_{2}$ films in the vicinity of the structural phase transition at $68^{0}C$ shows (a) that the electrical resistance $R$ follows $log (R)$ $\propto$ $-T$ over the $T$-range, $20 < T < 80 ^{0}C$ covering both sides of the structural transition, and (b) a history dependent hysteresis loop in $R$ upon thermal cycling. These features are attributed here to transport through a granular network. 3 pages, 3 color figures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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