Fine-structure transitions of Si and S induced by collisions with atomic hydrogen

Autor:	Pei-Gen Yan, James F Babb
Rok vydání:	2023
Předmět:	Cosmology and Nongalactic Astrophysics (astro-ph.CO) Atomic Physics (physics.atom-ph) Space and Planetary Science FOS: Physical sciences Astronomy and Astrophysics Physics - Atomic Physics Astrophysics - Cosmology and Nongalactic Astrophysics
Zdroj:	Monthly Notices of the Royal Astronomical Society. 522:1265-1269
ISSN:	1365-2966 0035-8711
DOI:	10.1093/mnras/stad1050
Popis:	Using a quantum-mechanical close-coupling method, we calculate cross sections for fine structure excitation and relaxation of Si and S atoms in collisions with atomic hydrogen. Rate coefficients are calculated over a range of temperatures for astrophysical applications. We determine the temperature-dependent critical densities for the relaxation of Si and S in collisions with H and compare these to the critical densities for collisions with electrons. The present calculation should be useful in modeling environments exhibiting the [S i] 25 {\mu}m and [S i] 57 {\mu}m far-infrared emission lines or where cooling of S and Si by collisions with H are of interest. Comment: Updated table 2
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c596aaf6e60039cffebf13117d1eaeef https://doi.org/10.1093/mnras/stad1050 Zobrazit plný text záznamu