Lift-off protocols for thin films for use in EXAFS experiments
| Autor: | Claudia Schnohr, Mark C Ridgway, Patrick Kluth, Leandro Araujo, Bernt Johannessen, Zohair S. Hussain, Christopher Glover, Kristiaan Temst, Raquel Giulian, André Vantomme, Felipe Kremer, S. Decoster, David J. Sprouster, Hazar A. Salama |
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| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Nuclear and High Energy Physics
Compostos de silício Materials science thin film Analytical chemistry Pancreatitis-Associated Proteins Dielectric Specimen Handling Compostos de indio Filmes finos dieletricos lift-off Sample preparation Thin film dielectric Instrumentation Filmes finos semicondutores Radiation Extended X-ray absorption fine structure Scattering Small-angle X-ray scattering business.industry Arseneto de galio Spectrometry X-Ray Emission Membranes Artificial Semicondutores amorfos semiconductor Isotropic etching Crescimento de semicondutores EXAFS Semiconductor Semiconductors Nanoparticles business Estrutura fina estendida de absorção de raios x (EXAFS) |
| Zdroj: | Repositório Institucional da UFRGS Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
| Popis: | Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate. journal: Journal of Synchrotron Radiation content_type: research papers peer_reviewed: Yes review_process: Single blind received: 14 October 2012 accepted: 20 February 2013 published_online: 3 April 2013 copyright: © 2013 International Union of Crystallography ispartof: Journal of Synchrotron Radiation vol:20 issue:Pt 3 pages:426-432 ispartof: location:United States status: published |
| Databáze: | OpenAIRE |
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