Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
| Autor: | Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis, Aníbal Pacheco‐Sanchez, Ferney A. Chaves, David Jiménez |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
Condensed Matter - Mesoscale and Nanoscale Physics
Mechanical Engineering Compact modeling FOS: Physical sciences Physics - Applied Physics Applied Physics (physics.app-ph) 2D materials Transistors Hybrid integrated circuits Radio-frequency Mechanics of Materials Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Monolithic integrated circuits General Materials Science Graphene |
| Popis: | The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided. European Commission 881603 Spanish Government European Commission RTI2018-097876-B-C21 European Commission Departament de Recerca i Universitat 001-P-001702 |
| Databáze: | OpenAIRE |
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