Studying the Formation of Si (100) Stepped Surface in Molecular-Beam Epitaxy
| Autor: | M. Yu. Esin, Yu. Yu. Hervieu, Vyacheslav Timofeev, A. I. Nikiforov |
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| Rok vydání: | 2018 |
| Předmět: |
молекулярные пучки
Materials science Silicon 010308 nuclear & particles physics кремниевые подложки General Physics and Astronomy chemistry.chemical_element молекулярно-лучевая эпитаксия 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Diatomic molecule Reflection (mathematics) chemistry Electron diffraction Chemical physics 0103 physical sciences Growth rate 0210 nano-technology Molecular beam epitaxy |
| Zdroj: | Russian physics journal. 2018. Vol. 61, № 7. P. 1210-1214 |
| ISSN: | 1573-9228 1064-8887 |
| Popis: | Experimental studies of the formation of a stepped surface structure during molecular-beam epitaxy of silicon on a Si (100) substrate have been carried out in wide ranges of variation of the substrate temperature and silicon growth rate. The conditions of the transition from a two-domain structure of the Si (100) surface to a single-domain structure associated with the formation of diatomic steps are determined using reflection high-energy electron diffraction. It is shown that the effect of an increase in the substrate temperature on the transition to a single-domain structure is non-monotonic: a single-domain surface forms in the region of relatively low temperatures, whereas a two-domain surface forms at high temperatures. The transition to a single-domain structure during the experiment is possible only, if the silicon growth rate is increased above a certain minimum value. |
| Databáze: | OpenAIRE |
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