Charge carrier density noise in graphene: effect of localized/delocalized traps
| Autor: | Francesco M. D. Pellegrino, Giuseppe Falci, Elisabetta Paladino |
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| Rok vydání: | 2020 |
| Předmět: |
Statistics and Probability
FOS: Physical sciences 02 engineering and technology Electron 01 natural sciences Noise (electronics) graphene mesoscopic systems law.invention Delocalized electron Circuit quantum electrodynamics law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics Spin (physics) Physics Condensed matter physics Condensed Matter - Mesoscale and Nanoscale Physics Graphene Statistical and Nonlinear Physics Charge (physics) 021001 nanoscience & nanotechnology Charge carrier Statistics Probability and Uncertainty 0210 nano-technology |
| DOI: | 10.48550/arxiv.2011.04774 |
| Popis: | Graphene-based devices show $1/f$ low-frequency noise in several electronic transport properties, such as mobility and charge carrier concentration. The recent outburst of experimental studies on graphene-based devices integrated into circuit quantum electrodynamics systems has rekindled the interest in low-frequency charge noise. We investigate charge carrier density noise in graphene within the McWorther model where noise is induced by electron traps in the substrate. We focus on the large doping regime and introduce a simple modelization of the effect of localized/delocalized traps in terms of single/double spin occupancy of trap states. We find that in both cases the charge carrier spectrum of graphene obeys the $1/f^\alpha$ power-law behavior where $\alpha$ is very close to the unity, and for each case we evaluate the deviation $\beta=1-\alpha$. The amplitude of the noise is found to depend on the trap energy distribution and on temperature. Single/double spin occupancy of trap states influences the temperature dependence of noise amplitude only to second order. |
| Databáze: | OpenAIRE |
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