Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

Autor: Simonetta Capone, Luca Francioso, Pietro Siciliano, A. Forleo, O.K. Tan, Flavio Casino, H. Hui
Rok vydání: 2009
Předmět:
Zdroj: NANO 2010, Roma, 2010
info:cnr-pdr/source/autori:Forleo, L. Francioso, S. Capone, F. Casino, P. Siciliano, H. Huang, O.K. Tan/congresso_nome:NANO 2010/congresso_luogo:Roma/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
ISSN: 1876-6196
DOI: 10.1016/j.proche.2009.07.049
Popis: SnO 2 nanorods were successfully deposited on 3” Si/SiO 2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO 2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO 2 -nanords based gas sensors were tested towards NH 3 and CH 3 OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO 2 thin films gas sensors.
Databáze: OpenAIRE