Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods
Autor: | Simonetta Capone, Luca Francioso, Pietro Siciliano, A. Forleo, O.K. Tan, Flavio Casino, H. Hui |
---|---|
Rok vydání: | 2009 |
Předmět: |
Fabrication
Materials science plasma–enhanced chemical vapor deposition (PECVD) Chemistry(all) business.industry Analytical chemistry General Medicine Chemical vapor deposition Tin oxide Gas sensors Plasma-enhanced chemical vapor deposition Chemical Engineering(all) Optoelectronics Nanorod Wafer Nanorods Inductively coupled plasma Thin film business SnO2 |
Zdroj: | NANO 2010, Roma, 2010 info:cnr-pdr/source/autori:Forleo, L. Francioso, S. Capone, F. Casino, P. Siciliano, H. Huang, O.K. Tan/congresso_nome:NANO 2010/congresso_luogo:Roma/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine |
ISSN: | 1876-6196 |
DOI: | 10.1016/j.proche.2009.07.049 |
Popis: | SnO 2 nanorods were successfully deposited on 3” Si/SiO 2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO 2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO 2 -nanords based gas sensors were tested towards NH 3 and CH 3 OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO 2 thin films gas sensors. |
Databáze: | OpenAIRE |
Externí odkaz: |