Mask manufacturing contribution on 248-nm and 193-nm lithography performances

Autor:	Alexandra Barberet, Michel Tissier, Yves Quere, Jean-Charles Richoilley, Gilles L. Fanget
Rok vydání:	2001
Předmět:	Materials science business.industry Extreme ultraviolet lithography Laser law.invention Optics Etching (microfabrication) law Multiple patterning Node (circuits) Wafer X-ray lithography Photolithography Photomask business Lithography Next-generation lithography Immersion lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.425081
Popis:	In this study, we focus on mask manufacturing contribution on 248 nm and 193 nm lithography performances. The masks are manufactured at DPI using both E-beam/laser writing technologies (e-beam/laser) and two etching processes (wet/dry). Masks are optimized for 150 nm node at wafer scale, neither RET not tuning are used, despite of this, we obtain excellent and unexpected results for inferior nodes which highlight the robustness of the manufacturing mask process being used.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4b91eef88c01c819ea9a13061e9f73d https://doi.org/10.1117/12.425081 Zobrazit plný text záznamu