Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
| Autor: | Walter Riess, M. Najmzadeh, Adrian M. Ionescu, K. Boucart |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Tunnel FET Silicon Band gap Nanowire chemistry.chemical_element Multi-gate Stress (mechanics) Tunnel effect Materials Chemistry CMOS downscaling Electrical and Electronic Engineering Asymmetric strain profile Local strain engineering FP7 Lateral strain business.industry Electrical engineering Si nanowire Local lateral uniaxial tensile strain Condensed Matter Physics Electronic Optical and Magnetic Materials Threshold voltage Band-to-band tunneling chemistry Local band-gap modulation Optoelectronics Field-effect transistor Subthreshold swing business |
| Zdroj: | Solid-State Electronics. 54:935-941 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2010.04.037 |
| Popis: | This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the BTB source junction could act as an optimized performance Tunnel FET enabling the cancellation of the drain threshold voltage. To implement a real device, we demonstrate using GAA Si NW with asymmetric strain profile using two local stressor technologies to have >4–5 GPa peak of lateral uniaxial tensile stress in the Si NW. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect