Evaluation of an Empirical Model to Estimate and Optimize Mechanical Properties of PECVD SiC Films
| Autor: | Cassan C. C. Visser, Hoa T. M. Pham, Pasqualina M. Sarro, Charles R. de Boer |
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| Rok vydání: | 2005 |
| Předmět: |
internal stresses
Materials science wide band gap semiconductors Renewable Energy Sustainability and the Environment Design of experiments Wide-bandgap semiconductor Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Volumetric flow rate Stress (mechanics) Carbon film Plasma-enhanced chemical vapor deposition Materials Chemistry Electrochemistry Deposition (phase transition) semiconductor thin films Composite material silicon compounds plasma CVD |
| Zdroj: | Journal of the Electrochemical Society, 152 (11), 2005 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2060693 |
| Popis: | In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among the relevant deposition parameters, the SiH4 gas flow rate, the main parameter to determine the Si to C ratio, plays a crucial role in controlling the properties of SiC films. By combining a design of experiments with a mathematical technique, an empirical model to control the stress of the PECVD SiC films is obtained. Using this empirical model taking into account the interaction between parameters, the stress of the SiC film can be reduced down to only 22.5 MPa. |
| Databáze: | OpenAIRE |
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