Electromodulated reflectance study of self-assembled Ge/Si quantum dots

Autor: Aleksei Bloshkin, A. I. Yakimov, A. I. Nikiforov, Anatolii Dvurechenskii
Jazyk: angličtina
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 208 (2011)
Nanoscale Research Letters
ISSN: 1556-276X
DOI: 10.1186/1556-276x-6-208
Popis: We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.
Databáze: OpenAIRE