Electromodulated reflectance study of self-assembled Ge/Si quantum dots
Autor: | Aleksei Bloshkin, A. I. Yakimov, A. I. Nikiforov, Anatolii Dvurechenskii |
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Jazyk: | angličtina |
Předmět: |
Range (particle radiation)
Materials science Nano Express Nanochemistry Resonance Nanotechnology Electron Condensed Matter Physics Molecular physics Reflectivity Materials Science(all) Modulation Quantum dot lcsh:TA401-492 General Materials Science lcsh:Materials of engineering and construction. Mechanics of materials Spectroscopy |
Zdroj: | Nanoscale Research Letters, Vol 6, Iss 1, p 208 (2011) Nanoscale Research Letters |
ISSN: | 1556-276X |
DOI: | 10.1186/1556-276x-6-208 |
Popis: | We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point. |
Databáze: | OpenAIRE |
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