Ge quantum well optoelectronic devices for light modulation, detection, and emission
| Autor: | M. S. Rouifed, Laurent Vivien, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Papichaya Chaisakul, Jacopo Frigerio |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Extinction ratio business.industry Physics::Optics Photodetector Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Responsivity Optics Optical modulator law Electro-absorption modulator Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Quantum well Light-emitting diode |
| Zdroj: | Solid-State Electronics. 83:92-98 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2013.01.024 |
| Popis: | We report on light modulation, detection, and emission characteristics of Ge/SiGe multiple quantum well waveguides using the same epitaxial growth and fabrication steps. As an electro-absorption modulator, the device exhibits the capability to achieve high extinction ratio with low swing bias voltages and high modulation bandwidth. As a photodetector, dark currents, optical responsivities, and high speed performance have been studied. High speed light detection up to 10 Gb/s has been obtained simultaneously with good values of optical responsivity. As a light emitting diode, direct gap electroluminescence (EL) from the Ge/SiGe MQW waveguides has been experimentally demonstrated at room temperature within the spectral range of light modulation and detection. |
| Databáze: | OpenAIRE |
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