Investigation on full 6' masks using innovative solutions for direct physico-chemical analyses of Mask backglass contamination and Haze

Autor: J. Hamonne, O. Chaix-Pluchery, Laurent Dussault, P. Sergent, Stuart Gough, F. Dufaye, Bernard Pelissier, M. Tissier
Přispěvatelé: Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), Clot, Marielle
Jazyk: angličtina
Rok vydání: 2013
Předmět:
Zdroj: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2013, 104, pp.120-129
Microelectronic Engineering, 2013, 104, pp.120-129
ISSN: 0167-9317
1873-5568
Popis: The aim of this study is to determine the different types of haze contamination that occur in industrial conditions, using direct physico-chemical analyses on full 6'' masks leaving their pellicle intact. Contaminated masks coming from end users (ST - France) or masks fab (Toppan Photomask) have been analysed. First, references XPS analyses on specially designed blanks from Toppan have been performed. Four references have been studied by angle resolved XPS. These studies show the absence of nitrogen and sulphur contamination on SiO"2 side for the four references. On Cr side, a weak residual sulfur contamination has been observed as well as a very significant nitrogen concentration for the masks treated with a standard process. Concerning the masks treated with a sulfate free process, on Cr side, no residual sulfur has been detected by XPS, whereas few trace of nitrogen amount has been detected. Then a mask coming from the ST fab contaminated in real industrial conditions has been studied with several complementary characterisation techniques such as XPS, SEM, Raman and Tof-Sims. Theses analyses confirm that the back glass haze on the mask is on a particle form. Two types of defects have been found: small particles (a few @mm size), having a stick shape, with a very typical form indicating a crystal growth mechanism, and big particles (a few [email protected] size). The detailed physico-chemical results show the composition of the particles. Raman and Tof-Sims clearly show that small particle (with a stick form) are made of ammonium sulphate (NH"4)"2SO"4 crystals. XPS, Raman and Tof-Sims indicate that big particles are a nitrogen containing polymer with a weak sulphate contamination.
Databáze: OpenAIRE
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