The use of Highly Ionized Pulsed Plasmas for the Synthesis of Advanced Thin Films and Nanoparticles
| Autor: | Daniel Lundin, Ulf Helmersson, Iris Pilch, Daniel Söderström |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
General Chemical Engineering HiPIMS HPPMS IPVD Nanoparticle synthesis Sputtering Thin films Nanoparticle Nanotechnology Pulsed laser deposition Ion Degree of ionization lcsh:Technology (General) nanoparticle synthesis Fysik lcsh:Nuclear and particle physics. Atomic energy. Radioactivity General Materials Science Thin film ipvd hipims business.industry General Engineering General Chemistry Plasma thin films Physical Sciences lcsh:T1-995 lcsh:QC770-798 Optoelectronics hppms sputtering High-power impulse magnetron sputtering business |
| Zdroj: | ResearcherID KONA Powder and Particle Journal, Vol 31, Iss 0, Pp 171-180 (2014) |
| ISSN: | 2187-5537 0288-4534 |
| DOI: | 10.14356/kona.2014008 |
| Popis: | Pulsed plasma processes open up the possibility of using very high plasma densities and modulated deposition in the synthesis of thin films and nanoparticles. The high plasma densities lead to a high degree of ionization of the source material, which creates new possibilities for surface engineering. Ions can, in contrast to atoms, be easily controlled with regard to their energy and direction, which is beneficial for thin film growth. Furthermore, ions can also increase the trapping probability of material on nanoparticles growing in the gas phase. The pulsed sputter ejection of source material also has other consequences: the material in the plasma and the material arrival on the growth surface will fluctuate strongly resulting in high level of supersaturation during pulse-on time. In this paper, an overview of the generation and properties of highly ionized pulsed plasmas is given. In addition, the use and importance of these types of discharges in the fields of thin-film and nanoparticle growth are also summarized. |
| Databáze: | OpenAIRE |
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