Generation and annealing of hot hole induced interface states
| Autor: | Guido Groeseneken, Jenny Zhang, I.S. Al-Kofahi |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Hydrogen business.industry Annealing (metallurgy) chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electron injection Optoelectronics Electrical and Electronic Engineering Atomic physics business |
| Zdroj: | ResearcherID |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(97)00054-3 |
| Popis: | Hole injection into SiO 2 creates interface states not only during the injection, but also after the injection is terminated. This paper studies the annealing behaviour of interface states generated during and post hole injection. Interface states created by different stresses are compared and the role played by electron injection is investigated. The involvement of hydrogen species in the annealing is discussed and the hole detrapping process is addressed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect