Fenton Reaction for Enhancing Polishing Rate and Protonated Amine Functional Group Polymer for Inhibiting Corrosion in Ge1Sb4Te5 Film Surface Chemical-Mechanical-Planarization
| Autor: | Man-Hyup Han, Pil-Su Kim, Jin-Hyung Park, Bo-Un Yoon, Gi-Ppeum Jeong, Seong-Wan Hong, Hao Cui, Jun-Seong Park, Young-Hye Son, Jea-Gun Park |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
corrosion inhibitor
Technology Materials science QH301-705.5 QC1-999 Salt (chemistry) Polishing phase-change random-access memory Corrosion Fenton reaction chalcogenide Corrosion inhibitor chemistry.chemical_compound Chemical-mechanical planarization chemical-mechanical planarization medicine General Materials Science Biology (General) QD1-999 Instrumentation Fluid Flow and Transfer Processes chemistry.chemical_classification ferric–ionic catalyst Physics Process Chemistry and Technology General Engineering Polymer Engineering (General). Civil engineering (General) Computer Science Applications Chemistry chemistry Chemical engineering Slurry Ferric TA1-2040 medicine.drug |
| Zdroj: | Applied Sciences; Volume 11; Issue 22; Pages: 10872 Applied Sciences, Vol 11, Iss 10872, p 10872 (2021) |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app112210872 |
| Popis: | A Fenton reaction and a corrosion inhibition strategy were designed for enhancing the polishing rate and achieving a corrosion-free Ge1Sb4Te5 film surface during chemical-mechanical planarization (CMP) of three-dimensional (3D) cross-point phase-change random-access memory (PCRAM) cells and 3D cross-point synaptic arrays. The Fenton reaction was conducted with 1,3-propylenediamine tetraacetic acid, ferric ammonium salt (PDTA–Fe) and H2O2. The chemical oxidation degree of GeO2, Sb2O3, and TeO2 evidently increased with the PDTA–Fe concentration in the CMP slurry, such that the polishing rate of the Ge1Sb4Te5 film surface linearly increased with the PDTA–Fe concentration. The addition of a corrosion inhibitor having protonated amine functional groups in the CMP slurry remarkably suppressed the corrosion degree of the Ge1Sb4Te5 film surface after CMP; i.e., the corrosion current of the Ge1Sb4Te5 film surface linearly decreased as the corrosion inhibitor concentration increased. Thus, the proposed Fenton reaction and corrosion inhibitor in the Ge1Sb4Te5 film surface CMP slurry could achieve an almost recess-free Ge1Sb4Te5 film surface of the confined-PCRAM cells, having an aspect ratio of 60-nm-height to 4-nm-diameter after CMP. |
| Databáze: | OpenAIRE |
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