The quantitative 6H-SiC crystal damage depth profiling
| Autor: | E. Liarokapis, M. Kokkoris, Marko Gloginjić, K. Tomić Luketić, Srdjan Petrović, Marko Karlušić, Marko Erich, Stjepko Fazinić |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
SiC
RBS/c Nuclear and High Energy Physics Materials science Scanning electron microscope Analytical chemistry EBS 02 engineering and technology Crystal structure Quantitative crystal damage profiling Channelling 01 natural sciences 010305 fluids & plasmas Ion Crystal chemistry.chemical_compound Condensed Matter::Materials Science 6H-SiC Phase (matter) 0103 physical sciences Silicon carbide General Materials Science 021001 nanoscience & nanotechnology Ion implantation Nuclear Energy and Engineering chemistry 0210 nano-technology |
| Zdroj: | Journal of Nuclear Materials |
| Popis: | The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them. |
| Databáze: | OpenAIRE |
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