On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Autor:	Boris Desiatov, Anna Eiden, Jacob B. Khurgin, Domenico De Fazio, Ilya Goykhman, Uriel Levy, U. Sassi, Noa Mazurski, Andrea C. Ferrari, Silvia Milana, Joseph Shappir
Přispěvatelé:	De Fazio, Domenico [0000-0003-3327-078X], Ferrari, Andrea [0000-0003-0907-9993], Apollo - University of Cambridge Repository
Rok vydání:	2016
Předmět:	Materials science Letter Silicon chemistry.chemical_element Photodetector FOS: Physical sciences Bioengineering 02 engineering and technology 01 natural sciences 7. Clean energy law.invention 010309 optics Responsivity law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Silicon photonics Condensed Matter - Mesoscale and Nanoscale Physics silicon photonics business.industry Graphene Mechanical Engineering Settore FIS/01 - Fisica Sperimentale Schottky diode General Chemistry avalanche multiplication 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Single-photon avalanche diode Optoelectronics photodetectors Quantum efficiency 0210 nano-technology business
Zdroj:	Nano Letters
ISSN:	1530-6992
Popis:	We report an on-chip integrated metal graphene–silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal–silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3a65d7b63680ba2daf47f896564c93e https://pubmed.ncbi.nlm.nih.gov/27053042 Zobrazit plný text záznamu