Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane
| Autor: | K H Kim, Albert R. Ellingboe, Ki Seok Kim, J Y Byun, Y J Ji, Hyun Woo Tak, Geun Young Yeom |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Bioengineering 02 engineering and technology Nitride 010402 general chemistry 01 natural sciences chemistry.chemical_compound Atomic layer deposition General Materials Science Capacitively coupled plasma Electrical and Electronic Engineering business.industry Mechanical Engineering General Chemistry Semiconductor device Plasma 021001 nanoscience & nanotechnology Silane 0104 chemical sciences chemistry Silicon nitride Mechanics of Materials Optoelectronics 0210 nano-technology business |
| Zdroj: | Nanotechnology. 32(7) |
| ISSN: | 1361-6528 |
| Popis: | Silicon nitrides, deposited by capacitively coupled plasma (CCP)-type plasma enhanced atomic layer deposition (PEALD), are generally applied to today’s nanoscale semiconductor devices, and are currently being investigated in terms of their potential applications in the context of flexible displays, etc. During the PEALD process, 13.56 MHz rf power is generally employed for the generation of reactive gas plasma. In this study, the effects of a higher plasma generation frequency of 162 MHz on both plasma and silicon nitride film characteristics are investigated for the purpose of silicon nitride PEALD, using bis(diethylamino)silane (BDEAS) as the silicon precursor, and N2 plasma as the reactant gas. The PEALD silicon nitride film deposited using the 162 MHz CCP exhibited improved film characteristics, such as reduced surface roughness, a lower carbon percentage, a higher N/Si ratio, a lower wet etch rate in a diluted HF solution, lower leakage current, and higher electric breakdown field, and more uniform step coverage of the silicon nitride film deposited in a high aspect ratio trench, as compared to silicon nitride PEALD using 13.56 MHz CCP. These improved PEALD silicon nitride film characteristics are believed to be related to the higher ion density, higher reactive gas dissociation, and lower ion bombardment energy to the substrate observed in N2 plasma with a 162 MHz CCP. |
| Databáze: | OpenAIRE |
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