Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation
| Autor: | Alain Chantre, A. Monroy, J. Kirtsch, L. Vendrame, T. Gravier |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Engineering
Fabrication business.industry Bipolar junction transistor Transistor Integrated circuit BiCMOS Condensed Matter Physics Bicmos technology Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Electronic engineering Microelectronics Bicmos integrated circuits Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 36:1827-1830 |
| ISSN: | 0026-2714 |
| Popis: | A key issue in modern microelectronics is to improve and optimise device performance and reliability without excessively increasing fabrication costs. In this paper we will show how it is possible to improve the reliability of single-polysilicon quasi self-aligned BJTs of an advanced 0.5/spl mu/m BiCMOS technology by means of base surface As compensation without any additional mask. By carefully optimising the process parameters it is possible to maintain unchanged the characteristics of the intrinsic transistor compared to the reference one (without compensation) with only a slight increase of the parasitic base resistance, as proven by extensive statistical measurements. Depending on the As dose an increase of the device lifetime by up to four orders of magnitude can be obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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