Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
| Autor: | F. Schubert, S. Schmult, Steffen Wirth, F. Zimmermann, Johannes Heitmann, Thomas Mikolajick |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
302 Crystallization / Heat treatment / Crystal growth
Materials science Photoluminescence Analytical chemistry chemistry.chemical_element 100 Materials Gallium nitride 02 engineering and technology Epitaxy 01 natural sciences Oxygen Capacitance oxygen incorporation Article gan chemistry.chemical_compound 300 Processing / Synthesis and Recycling Condensed Matter::Materials Science Impurity 0103 physical sciences General Materials Science 105 Low-Dimension (1D/2D) materials Materials of engineering and construction. Mechanics of materials 103 Composites 500 Characterization 010302 applied physics mbe business.industry Optical Magnetic and Electronic Device Materials 505 Optical / Molecular spectroscopy 40 Optical magnetic and electronic device materials 021001 nanoscience & nanotechnology 200 Applications 201 Electronics / Semiconductor / TCOs 501 Chemical analyses chemistry TA401-492 Optoelectronics 0210 nano-technology business Stoichiometry TP248.13-248.65 Molecular beam epitaxy Biotechnology |
| Zdroj: | Science and Technology of Advanced Materials, Vol 17, Iss 1, Pp 239-243 (2016) Science and Technology of Advanced Materials |
| ISSN: | 1878-5514 1468-6996 |
| Popis: | Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications. |
| Databáze: | OpenAIRE |
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