Measuring small differential-mode voltages with high common-mode voltages and fast transients – Application to gate drivers for wide band-gap switches
| Autor: | Hadiseh Geramirad, Christian Vollaire, Florent Morel, Arnaud Breard, Bruno Lefebvre |
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| Přispěvatelé: | SuperGrid Institute SAS, Ampère, Département Méthodes pour l'Ingénierie des Systèmes (MIS), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE) |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Half-bridge Gate-driver Silicon carbide 02 engineering and technology Test probe Signal Power electronics MOSFET Isolated probe 0202 electrical engineering electronic engineering information engineering Gate driver SiC MOSFET Differential probe 0501 psychology and cognitive sciences Common-mode signal 050107 human factors Wide band-gap semi- conductors business.industry [SPI.NRJ]Engineering Sciences [physics]/Electric power 020208 electrical & electronic engineering 05 social sciences Semiconductor device [SPI.TRON]Engineering Sciences [physics]/Electronics [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism Optoelectronics business Voltage |
| Zdroj: | International Symposium on Electromagnetic Compatibility-EMC EUROPE International Symposium on Electromagnetic Compatibility-EMC EUROPE, Sep 2020, Rome, Italy. pp.1-5, ⟨10.1109/EMCEUROPE48519.2020.9245720⟩ |
| DOI: | 10.1109/emceurope48519.2020.9245720 |
| Popis: | International audience; In power electronics, gate-voltage measurement is used to optimize the design of the gate driver. Therefore a proper measurement technique is vital to ensure the proper operation of the electronic device. Measuring a small signal in a high switching voltage environment is a complicated task especially for high-side switches in a half-bridge configuration with fast semiconductor devices where voltage probes are subject to high common-mode voltages with fast transients. Hence, this article compares experimentally the conventional differential probes with optically isolated probes for measuring a small signal (26V) with a 1200V common-mode voltage and high switching rates created by SiC MOSFET (30kV/µs). The conventional differential probe shows differences of measured voltage amplitude up to 10V compared to optically isolated probe. The experimental results prove that parasitic elements of conventional differential probes change the gate-voltage shape and increase the common-mode current in the experimental setup up to 6dB. |
| Databáze: | OpenAIRE |
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