High TMR for both in-plane and perpendicular magnetic field justified by CoFeB free layer thickness for 3-D MTJ sensors
| Autor: | Weisheng Zhao, Shaohua Yan, Jun Wang, Qunwen Leng, You Qiang, Zicong Lei, Guo Zongxia, Zhiqiang Cao, Panshen Song |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Magnetoresistance Magnetic moment Condensed matter physics Annealing (metallurgy) General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences lcsh:QC1-999 Magnetic field Tunnel magnetoresistance 0103 physical sciences Perpendicular Antiferromagnetism Wafer 0210 nano-technology lcsh:Physics |
| Zdroj: | AIP Advances, Vol 9, Iss 8, Pp 085127-085127-6 (2019) |
| ISSN: | 2158-3226 |
| Popis: | We systematically studied the characteristics and influence of free layer thickness in magnetic tunnel junction (MTJ) with a perpendicular synthetic antiferromagnetic (p-SAF) reference layer on 8-inch wafer. The results show clearly that there is an optimal thickness of free layer to achieve the highest tunneling magnetoresistance (TMR) ratio of as high as 80.5% and 53.7% with perpendicular and in-plane magnetic field, respectively, while the resistance-area product (RA) reaches also highest value of 21.1 Ω*μm2. The thickness range of CoFeB to obtain perpendicular magnetic anisotropy (PMA) is determined. The variation of the magnetic moment of free layer indicates that the three-dimensional (3D) sensors can be designed by varying the thickness of the free layer and be controlled by the perpendicular and in-plane components through annealing under the in-plane magnetic field. |
| Databáze: | OpenAIRE |
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