Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

Autor: Vanessa Vervisch, F. Issa, L. Vermeeren, Laurent Ottaviani, Olivier Palais, M. Lazar, Anders Hallén, Axel Klix, Andrej Yu. Kuznetsov, Abdallah Lyoussi, D. Szalkai
Přispěvatelé: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), CEA Cadarache, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩
ISSN: 0018-9499
Popis: Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.
Databáze: OpenAIRE