Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted β-SiC films
| Autor: | R. Lossy, W. Reichert, Ernst Obermeier, M. González Sirgo, W. Skorupa |
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| Rok vydání: | 1997 |
| Předmět: |
Electron mobility
Materials science Dopant Annealing (metallurgy) Mechanical Engineering Analytical chemistry chemistry.chemical_element General Chemistry Electron Nitrogen Electronic Optical and Magnetic Materials Secondary Ion Mass Spectroscopy chemistry Electrical resistivity and conductivity Materials Chemistry Electrical and Electronic Engineering Post implantation |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(97)00073-3 |
| Popis: | Nitrogen was implanted into p-type β-SiC at implantation temperatures between 300 K and 1473 K. The implanted samples were characterized by Secondary Ion Mass Spectroscopy (SIMS) and electrically by resistivity and Hall measurements. The analysis was done with as-implanted samples and with samples that were annealed at 1473 K in a nitrogen atmosphere or in a vacuum. The implantation profiles did not show a significant dependence on the implantation temperature whereas the number of active dopants increased when the implantation temperature was raised. The electron mobility was also higher for high implantation temperatures, indicating a decrease in the implantation damage with increasing Timpl. As expected for the samples with Timpl < Tanneal, the annealing step caused a further rise in the number of electrically active dopants. The trend of electrical activation and the electron mobilities increasing with a higher implantation temperature remained unchanged also after the annealing step. |
| Databáze: | OpenAIRE |
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