TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory
| Autor: | Lama, G., Bernard, M., Garrione, J., Bernier, N., Castellani, N., Bourgeois, G., Cyrille, M.C., Andrieu, F., Navarro, Gabriele |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information, European Project: 101007321,StorAlge |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference (ESSDERC) ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.237-240, ⟨10.1109/ESSDERC55479.2022.9947157⟩ |
| DOI: | 10.1109/essderc55479.2022.9947157 |
| Popis: | International audience; In this work, we introduce an innovative Phase-Change Memory (PCM) based on a TiTe and Ge$_2$Sb$_2$Te$_5$ (GST) bi-layer stack that presents low resistance variability since the out-of-fabrication in 4 kb array. It allows creating reliably an intermixed system right from the first programming in the active volume of the device. TiTe/GST PCM exhibits higher speed, lower variability of intermediate resistance states and lower drift compared to standard GST. An endurance of more than 10$^8$ cycles can be achieved and we found a reduced cycle-to-cycle variability even after endurance stress. Such new TiTe/GST stack, based on our results, demonstrates to be a valuable candidate for PCM targeting Storage Class Memory applications. |
| Databáze: | OpenAIRE |
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