Morphology and Hydrogen in Passivating Amorphous Silicon Layers
| Autor: | Sebastian Gerke, Hans-Werner Becker, Reinhart Job, Giso Hahn, Barbara Terheiden, Detlef Rogalla |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Amorphous silicon
Materials science Passivation Hydrogen multi-layer stack Annealing (metallurgy) Doping chemistry.chemical_element Nanotechnology Chemical vapor deposition NRRA stability Amorphous solid chemistry.chemical_compound hydrogen depth profiling Energy(all) chemistry Chemical engineering FTIR a-Si Wafer annealing ddc:530 passivation |
| Popis: | Hydrogenated intrinsic amorphous silicon ((i)°a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i)°a-Si:H layer as well as the doping type and concentration of the c-Si wafer. The doping type of the c-Si wafer also affects the growth of the amorphous network. It is found that for moderately doped p-type c-Si a non-columnar (i)°a-Si:H layer yields a significantly better and more stable passivation already during thermal anneal and illumination, while for passivating n-type c-Si a columnar layer is recommended. Passivating lowly doped c-Si by (i)°a-Si:H is not dependent on morphology. Combining different (i)°a-Si:H morphologies to a multi-layer stack improves the quality of surface passivation. Hydrogen embedded in a well passivating but hydrogen-permeable columnar layer supports good surface passivation when covered by a non-columnar layer, featuring a fast growing layer acting as a hydrogen barrier and enhancing surface passivation quality. |
| Databáze: | OpenAIRE |
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