Determination of the optical bandgap of the Bernal and rhombohedral boron nitride polymorphs
| Autor: | Wilfried Desrat, James H. Edgar, Lianjie Xue, Eli Janzen, Guillaume Cassabois, Adrien Rousseau, Jiahan Li, Pierre Valvin, Bernard Gil, Matthieu Moret |
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| Přispěvatelé: | Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), S2QT, Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), PV2D, Kansas State University, ANR-19-CE30-0007,BONASPES,Décrypter l'optique du h-BN en combinant des spectroscopies à haute résolution spatiale, énergétique et angulaire(2019), ANR-19-CE08-0016,ZEOLIGHT,Prototype de LED UV à base de composite nitrure de bore/zéolithe pour la production de la lumière blanche(2019), ANR-19-MRS3-0022,BONUS,Nitrure de bore hexagonal pour l'optoélectronique UV profond(2019) |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Photoluminescence Physics and Astronomy (miscellaneous) Band gap Hexagonal boron nitride 02 engineering and technology Trigonal crystal system 021001 nanoscience & nanotechnology 01 natural sciences Crystal Crystallography chemistry.chemical_compound chemistry Boron nitride [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] 0103 physical sciences [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] General Materials Science 010306 general physics 0210 nano-technology |
| Zdroj: | Physical Review Materials Physical Review Materials, American Physical Society, 2021, 5, pp.064602. ⟨10.1103/PhysRevMaterials.5.064602⟩ |
| ISSN: | 2475-9953 |
| DOI: | 10.1103/physrevmaterials.5.064602 |
| Popis: | International audience; We report a study of polymorphic boron nitride samples. We interpret the photoluminescence line at 6.032±0.005 eV, that can be recorded at 8K in sp2-bonded boron nitride, as being the signature of the excitonic fundamental bandgap of the Bernal (or graphitic) boron nitride polymorph (bBN). This is determined by advanced photoluminescence measurements combined with x-ray characterizations on pure hexagonal boron nitride (hBN) and on polymorphic crystal samples, later compared with the theoretical predictions of Lorenzo Sponza, et al., Physical Review B 98, 125206 (2018). The overall picture is consistent with a direct excitonic fundamental bandgap of the Bernal (or graphitic) polymorph of boron nitride. This value dXb = 6.032±0.005 eV is higher than the indirect bandgap of hBN (iXh =5.955±0.005 eV). |
| Databáze: | OpenAIRE |
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