The effect of indium doping concentration on structural, morphological and gas sensing properties of IZO thin films deposited SILAR method
| Autor: | Selim Acar, Aytunç Ateş, Memet Ali Yıldırım, Baktiyar Soltabayev |
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| Přispěvatelé: | EBYÜ, Mühendislik Fakültesi |
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
In doped ZnO Scanning electron microscope Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences NO Adsorption 0103 physical sciences General Materials Science Thin film 010302 applied physics Mechanical Engineering Doping 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials Particle Crystallite 0210 nano-technology Gas sensor Layer (electronics) Indium |
| Popis: | In-doped ZnO thin films with 0%,1%, 3%, 5% and 7% In were deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates for nitric oxide (NO) gas sensing application. X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDAX) were used to evaluate the effect of In doping concentrations on properties of the films. The XRD study clearly shows the existence of the polycrystalline structure of the films. The morphological study indicates the formation of a uniform particle such as granular and nano-flower structures on the surface of the films. The most important morphological change was observed at 3% indium doped thin film, which has nano-flower surface morphology. The gas sensing measurements were performed for different temperature and different NO gas concentrations. The maximum gas sensitivity was revealed at an optimal indium doping concentration of 3 at.% that achieved the highest sensitivity with a value of 22.4 for 50 ppm NO gas at 167 °C. |
| Databáze: | OpenAIRE |
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