ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs
| Autor: | Ben Breitung, Felix Neuper, Surya Abhishek Singaraju, Robert Kruk, Jasmin Aghassi-Hagmann, Horst Hahn, Gabriel Cadilha Marques |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Graphene Transistor Dielectric Electrolyte Orders of magnitude (numbers) 7. Clean energy 01 natural sciences Electronic Optical and Magnetic Materials law.invention Atomic layer deposition law 0103 physical sciences Optoelectronics Relative humidity Electrical and Electronic Engineering business Low voltage |
| Zdroj: | IEEE Transactions on Electron Devices |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.3005624 |
| Popis: | In this report, we have studied field-effect transistors (FETs) using low-density alumina for electrolytic gating. Device layers have been prepared starting from the structured ITO glasses by printing the In2O3 channels, low-temperature atomic layer deposition (ALD) of alumina (Al2O3), and printing graphene top gates. The transistor performance could be deliberately changed by alternating the ambient humidity; furthermore, $I_{D,{\mathrm {ON}}}/I_{D,{\mathrm {OFF}}}$ -ratios of up to seven orders of magnitude and threshold voltages between 0.66 and 0.43 V, decreasing with an increasing relative humidity between 40% and 90%, could be achieved. In contrast to the common usage of Al2O3 as the dielectric in the FETs, our devices show electrolyte-type gating behavior. This is a result from the formation of protons on the Al2O3 surfaces at higher humidities. Due to the very high local capacitances of the Helmholtz double layers at the channel surfaces, the operation voltage can be as low as 1 V. At low humidities (≤30%), the solid electrolyte dries out and the performance breaks down; however, it can fully reversibly be regained upon a humidity increase. Using ALD-derived alumina as solid electrolyte gating material, thus, allows low-voltage operation and provides a chemically stable gating material while maintaining low process temperatures. However, it has proven to be highly humidity-dependent in its performance. |
| Databáze: | OpenAIRE |
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