ELECTRON-HOLE PLASMA IN DIRECT GAP SEMICONDUCTORS - A NEW NON-EQUILIBRIUM MODEL
| Autor: | Heinz Schweizer, Guenter Mahler, Alfred Forchel, K.M. Romanek, J. Fischer, H. Nather |
|---|---|
| Předmět: |
Materials science
Condensed matter physics business.industry Binding energy General Engineering Plasma diffusion Plasma Electron hole Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Semiconductor Physics::Plasma Physics Phenomenological model Compound semiconductor Atomic physics business Plasma density |
| Zdroj: | Scopus-Elsevier |
| Popis: | The formation of non-equilibrium electron-hole plasmas in direct gap semiconductors is studied using a phenomenological model for the plasma thermodiffusion. Our theoretical results for the plasma density as a function of temperature and bandstructure are in good agreement with new experimental results from InP and with literature data from different III–V and II–VI compound semiconductors. Including the plasma diffusion in the calculation of lineshapes we remove previously reported discrepancies between the experimental and theoretical binding energies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|