Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers
| Autor: | T.P. Chow, N. Ramungul |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Negative resistance Drop (liquid) Doping Wide-bandgap semiconductor Carrier lifetime Cathode law.invention Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry law Electrical resistivity and conductivity Silicon carbide Optoelectronics Electrical performance Electrical and Electronic Engineering Current (fluid) business Current density Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 46:493-496 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.748867 |
| Popis: | This paper presents an experimental demonstration of a current-controlled negative resistance (CCNR) in the forward characteristics of 6H-SiC P-i-N rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behaviour appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N/sup +/P junctions exhibit excellent forward characteristics with forward drop of 2.8 V at 100 A/cm/sup 2/ and 3.9 V at 1000 A/cm/sup 2/ without entering the CCNR mode when traps have been filled prior to the measurement. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|