Polarized Raman scattering study of PSN single crystals and epitaxial thin films
| Autor: | Y. Bing, Maxim Savinov, Jirka Hlinka, Jan Drahokoupil, F. Borodavka, Miroslav Jelinek, Ivan Gregora, Zuo-Guang Ye, M. Tyunina, Jan Pokorný, I. Rafalovskyi, Tomáš Kocourek |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Raman scattering
Materials science lcsh:QC501-721 Dielectric Epitaxy relaxors symbols.namesake Optics PbSc0.5Nb0.5O3 (PSN) lcsh:Electricity Electrical and Electronic Engineering Thin film Condensed matter physics Scattering business.industry Epitaxial thin film ferroelectrics Condensed Matter Physics Polarization (waves) complex perovskites Ferroelectricity Electronic Optical and Magnetic Materials Ceramics and Composites symbols business |
| Zdroj: | Journal of Advanced Dielectrics, Vol 5, Iss 2, Pp 1550013-1-1550013-6 (2015) |
| ISSN: | 2010-1368 |
| Popis: | This paper describes a detailed analysis of the dependence of Raman scattering intensity on the polarization of the incident and inelastically scattered light in PbSc 0.5 Nb 0.5 O 3 (PSN) single crystals and epitaxially compressed thin films grown on (100)-oriented MgO substrates. It is found that there are significant differences between the properties of the crystals and films, and that these differences can be attributed to the anticipated structural differences between these two forms of the same material. In particular, the scattering characteristics of the oxygen octahedra breathing mode near 810 cm-1 indicate a ferroelectric state for the crystals and a relaxor state for the films, which is consistent with the dielectric behaviors of these materials. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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